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| Datasheet File OCR Text: |
| PROCESS CP289 Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 167 x 167 MILS 9.5 MILS 59 x 29 MILS 64 x 28 MILS Al - 45,000A Ti/Ni/Ag - 3,000A, 10,000A, 10,000A GEOMETRY GROSS DIE PER 5 INCH WAFER 558 PRINCIPAL DEVICE TYPES MJE13009 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (5- January 2006) |
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